Single event burnout in power diodes: Mechanisms and models
نویسندگان
چکیده
Power electronic devices are susceptible to catastrophic failures when they are exposed to energetic particles; the most serious failure mechanism is single event burnout (SEB). SEB is a widely recognized problem for space applications, but it also may affect devices in terrestrial applications. This phenomenon has been studied in detail for power MOSFETs, but much less is known about the mechanisms responsible for SEB in power diodes. This paper reviews the current state-of-knowledge of power-diode vulnerability to SEB, based on both experimental and simulation results. It is shown that present models are limited by the lack of detailed descriptions of thermal processes that lead to physical failure. 2005 Published by Elsevier Ltd.
منابع مشابه
Thermal Characterization of Single Event Burnout Failure in Semiconductor Power Devices - Semiconductor Thermal Measurement and Management Symposium, 2000. Sixteenth Annual IEEE
Previous experimental investigations of single event burnout of power devices due to heavy ion impacts have been performed to identify the conditions required to result in failure of devices. To verify these findings, simulations have been performed that model the burnout with limited success. Although simulations provide order-of-magnitude estimates as well as prediction of phenomenological fe...
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ورودعنوان ژورنال:
- Microelectronics Reliability
دوره 46 شماره
صفحات -
تاریخ انتشار 2006